MTW16N40E vs IRFP341 feature comparison

MTW16N40E Rochester Electronics LLC

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IRFP341 Samsung Semiconductor

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC SAMSUNG SEMICONDUCTOR INC
Part Package Code TO-247AE TO-3P
Package Description CASE 340K-01, 3 PIN TO-3P, 3 PIN
Pin Count 3 3
Manufacturer Package Code CASE 340K-01
Reach Compliance Code unknown unknown
Additional Feature HIGH VOLTAGE
Avalanche Energy Rating (Eas) 870 mJ 520 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 400 V 350 V
Drain Current-Max (ID) 16 A 10 A
Drain-source On Resistance-Max 0.24 Ω 0.55 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AE
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 56 A 40 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.29.00.95
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 150 W
Turn-off Time-Max (toff) 111 ns
Turn-on Time-Max (ton) 62 ns

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