MTH25N08
vs
BUZ344
feature comparison
All Stats
Differences Only
Rohs Code
No
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MOTOROLA SEMICONDUCTOR PRODUCTS
INFINEON TECHNOLOGIES AG
Package Description
,
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
unknown
Configuration
Single
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID)
25 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
170 W
Surface Mount
NO
NO
Base Number Matches
3
2
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
400 mJ
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
50 A
Drain-source On Resistance-Max
0.035 Ω
JEDEC-95 Code
TO-218AA
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Pulsed Drain Current-Max (IDM)
200 A
Qualification Status
Not Qualified
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
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