MTH25N08 vs BUZ344 feature comparison

MTH25N08 Freescale Semiconductor

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BUZ344 Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MOTOROLA SEMICONDUCTOR PRODUCTS INFINEON TECHNOLOGIES AG
Package Description , FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown
Configuration Single SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 25 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 170 W
Surface Mount NO NO
Base Number Matches 3 2
ECCN Code EAR99
Avalanche Energy Rating (Eas) 400 mJ
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.035 Ω
JEDEC-95 Code TO-218AA
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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