MTD6N20E1 vs MTD6P10ET4G feature comparison

MTD6N20E1 Rochester Electronics LLC

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MTD6P10ET4G onsemi

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ON SEMICONDUCTOR
Package Description DPAK-3 LEAD FREE, CASE 369C-01, DPAK-3
Pin Count 3 3
Reach Compliance Code unknown not_compliant
Avalanche Energy Rating (Eas) 54 mJ 180 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 100 V
Drain Current-Max (ID) 6 A 6 A
Drain-source On Resistance-Max 0.7 Ω 0.66 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e0 e3
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A 18 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 1
Manufacturer Package Code CASE 369C-01
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 50 W

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