MTD6N20E-T4
vs
MTD5P06VT4
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MOTOROLA INC
ON SEMICONDUCTOR
Package Description
SMALL OUTLINE, R-PSSO-G2
CASE 369C-01, DPAK-3
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
54 mJ
125 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
60 V
Drain Current-Max (ID)
6 A
5 A
Drain-source On Resistance-Max
0.7 Ω
0.45 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
235
Polarity/Channel Type
N-CHANNEL
P-CHANNEL
Pulsed Drain Current-Max (IDM)
18 A
18 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn80Pb20)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Pbfree Code
Part Package Code
DPAK (SINGLE GAUGE) TO-252
Pin Count
3
Manufacturer Package Code
369C
HTS Code
8541.29.00.95
Samacsys Manufacturer
onsemi
Additional Feature
AVALANCHE RATED
Operating Temperature-Max
175 °C
Power Dissipation-Max (Abs)
40 W
Compare MTD6N20E-T4 with alternatives
Compare MTD5P06VT4 with alternatives