MTD5P06V-T4
vs
MTD6N20ET4
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
MOTOROLA INC
MOTOROLA INC
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
unknown
unknown
Avalanche Energy Rating (Eas)
125 mJ
54 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
200 V
Drain Current-Max (ID)
5 A
6 A
Drain-source On Resistance-Max
0.45 Ω
0.7 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
18 A
18 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
NOT SPECIFIED
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
5
Additional Feature
AVALANCHE RATED
Feedback Cap-Max (Crss)
55 pF
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
50 W
Turn-off Time-Max (toff)
84.8 ns
Turn-on Time-Max (ton)
75.6 ns
Compare MTD5P06V-T4 with alternatives
Compare MTD6N20ET4 with alternatives