MTD6N20ET4
vs
MTD6P10ET4G
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA INC
|
ON SEMICONDUCTOR
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
LEAD FREE, CASE 369C-01, DPAK-3
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED
|
| Avalanche Energy Rating (Eas) |
54 mJ
|
180 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
100 V
|
| Drain Current-Max (ID) |
6 A
|
6 A
|
| Drain-source On Resistance-Max |
0.7 Ω
|
0.66 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
55 pF
|
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
| Power Dissipation Ambient-Max |
50 W
|
|
| Pulsed Drain Current-Max (IDM) |
18 A
|
18 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
84.8 ns
|
|
| Turn-on Time-Max (ton) |
75.6 ns
|
|
| Base Number Matches |
5
|
1
|
| Rohs Code |
|
Yes
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
CASE 369C-01
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.29.00.95
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
50 W
|
| Terminal Finish |
|
TIN
|
|
|
|
Compare MTD6N20ET4 with alternatives
Compare MTD6P10ET4G with alternatives