MTD5P06V-T4
vs
MTD5P06V-1
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
MOTOROLA INC
ROCHESTER ELECTRONICS LLC
Package Description
SMALL OUTLINE, R-PSSO-G2
CASE 369D-01, DPAK-3
Reach Compliance Code
unknown
unknown
Avalanche Energy Rating (Eas)
125 mJ
125 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
5 A
5 A
Drain-source On Resistance-Max
0.45 Ω
0.45 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Pulsed Drain Current-Max (IDM)
18 A
18 A
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
YES
NO
Terminal Finish
NOT SPECIFIED
TIN LEAD
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Pbfree Code
Rohs Code
Pin Count
3
Manufacturer Package Code
CASE 369D-01
Additional Feature
AVALANCHE RATED
JESD-609 Code
e0
Moisture Sensitivity Level
NOT SPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare MTD5P06V-T4 with alternatives
Compare MTD5P06V-1 with alternatives