MTD1N50ET4
vs
HUF75329D3S
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
MOTOROLA SEMICONDUCTOR PRODUCTS
INTERSIL CORP
Package Description
,
Reach Compliance Code
unknown
not_compliant
Configuration
Single
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID)
1 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
175 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
40 W
70 W
Surface Mount
YES
YES
Base Number Matches
4
4
ECCN Code
EAR99
Case Connection
DRAIN
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
20 A
Drain-source On Resistance-Max
0.026 Ω
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Qualification Status
Not Qualified
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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