MTB60N06HDT4
vs
NTB45N06T4G
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
End Of Life
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
ONSEMI
Package Description
CASE 418B-03, D2PAK-3
D2PAK-3
Pin Count
3
3
Manufacturer Package Code
CASE 418B-03
418B-04
Reach Compliance Code
unknown
not_compliant
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
540 mJ
240 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
60 A
45 A
Drain-source On Resistance-Max
0.014 Ω
0.026 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e0
e3
Moisture Sensitivity Level
NOT SPECIFIED
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
180 A
150 A
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Matte Tin (Sn) - annealed
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
4
1
Part Package Code
D2PAK 2 LEAD
ECCN Code
EAR99
HTS Code
8541.29.00.95
Samacsys Manufacturer
onsemi
Operating Temperature-Max
175 °C
Power Dissipation-Max (Abs)
125 W
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