MTB60N06HDT4 vs MTB50N06E feature comparison

MTB60N06HDT4 Motorola Semiconductor Products

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MTB50N06E Freescale Semiconductor

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MOTOROLA INC MOTOROLA SEMICONDUCTOR PRODUCTS
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown
ECCN Code EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE Single
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 60 A 50 A
Drain-source On Resistance-Max 0.014 Ω 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 4 3
Rohs Code No
Drain Current-Max (Abs) (ID) 50 A
JESD-609 Code e0
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 2.5 W
Terminal Finish Tin/Lead (Sn/Pb)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED