Part Details for MTB50N06E by Freescale Semiconductor
Overview of MTB50N06E by Freescale Semiconductor
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Part Details for MTB50N06E
MTB50N06E CAD Models
MTB50N06E Part Data Attributes
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MTB50N06E
Freescale Semiconductor
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Datasheet
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MTB50N06E
Freescale Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,50A I(D),TO-263AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA SEMICONDUCTOR PRODUCTS | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| Case Connection | DRAIN | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (Abs) (ID) | 50 A | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |