MTB33N10ET4 vs IRF540 feature comparison

MTB33N10ET4 onsemi

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IRF540 Samsung Semiconductor

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Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer ON SEMICONDUCTOR SAMSUNG SEMICONDUCTOR INC
Package Description CASE 418B-03, D2PAK-3 TO-220, 3 PIN
Pin Count 3 3
Manufacturer Package Code CASE 418B-03
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
kg CO2e/kg 8.8
Average Weight (mg) 1979.3
CO2e (mg) 17417.841
Total Weight 1420
Category CO2 Kg 8.8
CO2 12496.000000000002
Candidate List Date 2024-01-23
SVHC Over MCV 7439-92-1
CAS Accounted for Wt 96
CA Prop 65 Presence YES
CA Prop 65 CAS Numbers 7439-92-1, 7440-02-0, 1309-64-4
EFUP 50
Conflict Mineral Status DRC Conflict Free Undeterminable
Conflict Mineral Status Source FMD
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 545 mJ 230 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 33 A 28 A
Drain-source On Resistance-Max 0.06 Ω 0.077 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W 150 W
Pulsed Drain Current-Max (IDM) 99 A 110 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Part Package Code SFM
HTS Code 8541.29.00.95
JEDEC-95 Code TO-220AB
Power Dissipation Ambient-Max 125 W
Turn-off Time-Max (toff) 135 ns
Turn-on Time-Max (ton) 133 ns

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