MTB30P06VT4G vs SPD30P06PG feature comparison

MTB30P06VT4G onsemi

Buy Now Datasheet

SPD30P06PG Infineon Technologies AG

Buy Now Datasheet
Pbfree Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ONSEMI INFINEON TECHNOLOGIES AG
Part Package Code D2PAK 2 LEAD TO-252
Package Description D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 4
Manufacturer Package Code 418B-04
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 450 mJ 250 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.08 Ω 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 310 pF
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 125 W 125 W
Pulsed Drain Current-Max (IDM) 105 A 120 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 300 ns
Turn-on Time-Max (ton) 80 ns
Base Number Matches 1 1
Rohs Code Yes
Additional Feature AVALANCHE RATED
JEDEC-95 Code TO-252

Compare MTB30P06VT4G with alternatives

Compare SPD30P06PG with alternatives