MTB30P06VT4G
vs
SPD30P06PG
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
ONSEMI
INFINEON TECHNOLOGIES AG
Part Package Code
D2PAK 2 LEAD
TO-252
Package Description
D2PAK-3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
4
Manufacturer Package Code
418B-04
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
onsemi
Avalanche Energy Rating (Eas)
450 mJ
250 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
30 A
30 A
Drain-source On Resistance-Max
0.08 Ω
0.075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
310 pF
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
125 W
125 W
Pulsed Drain Current-Max (IDM)
105 A
120 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN
Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
300 ns
Turn-on Time-Max (ton)
80 ns
Base Number Matches
1
1
Rohs Code
Additional Feature
AVALANCHE RATED
JEDEC-95 Code
TO-252
Compare MTB30P06VT4G with alternatives
Compare SPD30P06PG with alternatives