Datasheets
MTB30P06VT4G by: onsemi

Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK, D2PAK 2 LEAD, 800-REEL

Part Details for MTB30P06VT4G by onsemi

Overview of MTB30P06VT4G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for MTB30P06VT4G

Part # Distributor Description Stock Price Buy
DISTI # 09R9556
Newark P Channel Mosfet, -60V, 30A, D2-Pak, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:30A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.6V Rohs Compliant: Yes |Onsemi MTB30P06VT4G RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
ComSIT USA 60 VOLTS, 30 AMPS, P-CHANNEL D2PAK POWER MOSFET Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Stock EU - 3900
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
NexGen Digital   2
RFQ

Part Details for MTB30P06VT4G

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MTB30P06VT4G Part Data Attributes

MTB30P06VT4G onsemi
Buy Now Datasheet
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MTB30P06VT4G onsemi Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK, D2PAK 2 LEAD, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code D2PAK 2 LEAD
Package Description D2PAK-3
Pin Count 3
Manufacturer Package Code 418B-04
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 450 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 310 pF
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 105 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 300 ns
Turn-on Time-Max (ton) 80 ns

Alternate Parts for MTB30P06VT4G

This table gives cross-reference parts and alternative options found for MTB30P06VT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTB30P06VT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTB30P06VT4 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 onsemi MTB30P06VT4G vs MTB30P06VT4
MTB30P06VT4 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MTB30P06VT4G vs MTB30P06VT4
MTB30P06VT4 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 Rochester Electronics LLC MTB30P06VT4G vs MTB30P06VT4
MTB30P06V 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 onsemi MTB30P06VT4G vs MTB30P06V
Part Number Description Manufacturer Compare
SPD30P06P-E4-E6327 Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG MTB30P06VT4G vs SPD30P06P-E4-E6327
UTT25P06L-TN3-T Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, Unisonic Technologies Co Ltd MTB30P06VT4G vs UTT25P06L-TN3-T
UTT25P06L-TN3-R Power Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 Unisonic Technologies Co Ltd MTB30P06VT4G vs UTT25P06L-TN3-R
IRFU5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 Infineon Technologies AG MTB30P06VT4G vs IRFU5305PBF
AUIRFU5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3 International Rectifier MTB30P06VT4G vs AUIRFU5305
SPD30P06P Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG MTB30P06VT4G vs SPD30P06P
MTB30P06VT4 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 onsemi MTB30P06VT4G vs MTB30P06VT4
IRFU5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 International Rectifier MTB30P06VT4G vs IRFU5305PBF
SPD30P06PG Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG MTB30P06VT4G vs SPD30P06PG
SPD30P06PGBTMA1 Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG MTB30P06VT4G vs SPD30P06PGBTMA1

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