MTA4ATF51264HZ-3G2E1
vs
MTA4ATF51264HZ-3G2J1
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
MICRON TECHNOLOGY INC
|
Package Description |
DIMM,
|
DIMM,
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.36
|
8542.32.00.36
|
Date Of Intro |
2017-05-26
|
2018-10-31
|
Samacsys Manufacturer |
Micron
|
Micron
|
Access Mode |
SINGLE BANK PAGE BURST
|
SINGLE BANK PAGE BURST
|
Additional Feature |
WD-MAX
|
AUTO/SELF REFRESH; WD-MAX
|
JESD-30 Code |
R-XZMA-N260
|
R-XDMA-N260
|
Length |
69.6 mm
|
69.6 mm
|
Memory Density |
34359738368 bit
|
34359738368 bit
|
Memory IC Type |
DDR DRAM MODULE
|
DDR DRAM MODULE
|
Memory Width |
64
|
64
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
260
|
260
|
Number of Words |
536870912 words
|
536870912 words
|
Number of Words Code |
512000000
|
512000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
95 °C
|
95 °C
|
Operating Temperature-Min |
|
|
Organization |
512MX64
|
512MX64
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Code |
DIMM
|
DIMM
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Seated Height-Max |
30.13 mm
|
30.13 mm
|
Supply Voltage-Max (Vsup) |
1.26 V
|
1.26 V
|
Supply Voltage-Min (Vsup) |
1.14 V
|
1.14 V
|
Supply Voltage-Nom (Vsup) |
1.2 V
|
1.2 V
|
Surface Mount |
NO
|
NO
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
OTHER
|
OTHER
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
ZIG-ZAG
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Width |
2.5 mm
|
2.5 mm
|
Base Number Matches |
1
|
1
|
Self Refresh |
|
YES
|
|
|
|
Compare MTA4ATF51264HZ-3G2E1 with alternatives
Compare MTA4ATF51264HZ-3G2J1 with alternatives