MT5C2561-12AT vs PDM41257LA12SOITY feature comparison

MT5C2561-12AT Micron Technology Inc

Buy Now Datasheet

PDM41257LA12SOITY Paradigm Technology Inc

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC PARADIGM TECHNOLOGY INC
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 12 ns 12 ns
I/O Type SEPARATE
JESD-30 Code R-PDIP-T24 R-PDSO-J24
JESD-609 Code e0
Memory Density 262144 bit 262144 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 1 1
Number of Terminals 24 24
Number of Words 262144 words 262144 words
Number of Words Code 256000 256000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 256KX1 256KX1
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP SOJ
Package Equivalence Code DIP24,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.007 A
Standby Voltage-Min 4.5 V 2 V
Supply Current-Max 0.18 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO YES
Technology CMOS CMOS
Temperature Grade AUTOMOTIVE INDUSTRIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE J BEND
Terminal Pitch 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 1 2
Package Description ,
Number of Functions 1
Number of Ports 1
Output Enable NO
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V

Compare MT5C2561-12AT with alternatives

Compare PDM41257LA12SOITY with alternatives