MT58L256V18P1B-6
vs
MCM69R820CZP4.4R
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
FREESCALE SEMICONDUCTOR INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
BGA,
|
BGA,
|
| Pin Count |
119
|
119
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
3.5 ns
|
2.2 ns
|
| JESD-30 Code |
R-PBGA-B119
|
R-PBGA-B119
|
| JESD-609 Code |
e1
|
|
| Length |
22 mm
|
22 mm
|
| Memory Density |
4718592 bit
|
4718592 bit
|
| Memory IC Type |
STANDARD SRAM
|
LATE-WRITE SRAM
|
| Memory Width |
18
|
18
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
119
|
119
|
| Number of Words |
262144 words
|
262144 words
|
| Number of Words Code |
256000
|
256000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
256KX18
|
256KX18
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
BGA
|
BGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY
|
GRID ARRAY
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
2.4 mm
|
2.4 mm
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.465 V
|
| Supply Voltage-Min (Vsup) |
3.135 V
|
3.135 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
BICMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Finish |
TIN SILVER COPPER
|
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
1.27 mm
|
1.27 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
14 mm
|
14 mm
|
| Base Number Matches |
2
|
1
|
|
|
|
Compare MT58L256V18P1B-6 with alternatives
Compare MCM69R820CZP4.4R with alternatives