MT46V32M16FN-6LIT:D vs K4H511638J-BPB3T feature comparison

MT46V32M16FN-6LIT:D Micron Technology Inc

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K4H511638J-BPB3T Samsung Semiconductor

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No Yes
No Yes
Obsolete Obsolete
MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
unknown compliant
EAR99 EAR99
8542.32.00.28 8542.32.00.28
0.7 ns 0.7 ns
166 MHz 166 MHz
COMMON COMMON
2,4,8 2,4,8
R-PBGA-B60 R-PBGA-B60
536870912 bit 536870912 bit
DDR1 DRAM DDR1 DRAM
16 16
1 1
60 60
33554432 words 33554432 words
32000000 32000000
85 °C 85 °C
-40 °C -40 °C
32MX16 32MX16
3-STATE 3-STATE
PLASTIC/EPOXY PLASTIC/EPOXY
BGA BGA
BGA60,9X12,40/32 BGA60,9X12,40/32
RECTANGULAR RECTANGULAR
GRID ARRAY GRID ARRAY
Not Qualified Not Qualified
8192 8192
2,4,8 2,4,8
0.005 A 0.005 A
0.405 mA 0.2 mA
2.5 V 2.5 V
YES YES
CMOS CMOS
INDUSTRIAL INDUSTRIAL
BALL BALL
0.8 mm 0.8 mm
BOTTOM BOTTOM
1 1
BGA, BGA60,9X12,40/32
e3
260
MATTE TIN

Compare MT46V32M16FN-6LIT:D with alternatives

Compare K4H511638J-BPB3T with alternatives