Datasheets
MT46V32M16FN-6LIT:D by: Micron Technology Inc

DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60

Part Details for MT46V32M16FN-6LIT:D by Micron Technology Inc

Overview of MT46V32M16FN-6LIT:D by Micron Technology Inc

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Available Datasheets

Part # Manufacturer Description Datasheet
DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB.
DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness.
DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness.

Part Details for MT46V32M16FN-6LIT:D

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MT46V32M16FN-6LIT:D Part Data Attributes

MT46V32M16FN-6LIT:D Micron Technology Inc
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MT46V32M16FN-6LIT:D Micron Technology Inc DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60
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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Time-Max 0.7 ns
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PBGA-B60
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Moisture Sensitivity Level 1
Number of Terminals 60
Number of Words 33554432 words
Number of Words Code 32000000
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code BGA
Package Equivalence Code BGA60,9X12,40/32
Package Shape RECTANGULAR
Package Style GRID ARRAY
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 2,4,8
Standby Current-Max 0.005 A
Supply Current-Max 0.405 mA
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM

Alternate Parts for MT46V32M16FN-6LIT:D

This table gives cross-reference parts and alternative options found for MT46V32M16FN-6LIT:D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT46V32M16FN-6LIT:D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
K4H511638J-BPB3T Samsung Semiconductor Check for Price DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 MT46V32M16FN-6LIT:D vs K4H511638J-BPB3T
K4H511638D-ZPB3T Samsung Semiconductor Check for Price DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 MT46V32M16FN-6LIT:D vs K4H511638D-ZPB3T
NT5DS32M16BF-6KI Nanya Technology Corporation Check for Price DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 1 MM PITCH, WBGA-60 MT46V32M16FN-6LIT:D vs NT5DS32M16BF-6KI
H5DU5162EFR-J3I SK Hynix Inc Check for Price DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 MT46V32M16FN-6LIT:D vs H5DU5162EFR-J3I
H5DU5162EFR-J3J SK Hynix Inc Check for Price DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 MT46V32M16FN-6LIT:D vs H5DU5162EFR-J3J
K4H511638C-ZIB3T Samsung Semiconductor Check for Price Cache DRAM Module, 32MX16, 0.7ns, CMOS, PBGA60 MT46V32M16FN-6LIT:D vs K4H511638C-ZIB3T
MT46V32M16BN-6IT:D Micron Technology Inc Check for Price DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 MT46V32M16FN-6LIT:D vs MT46V32M16BN-6IT:D
K4H511638C-ZPB3T Samsung Semiconductor Check for Price Cache DRAM Module, 32MX16, 0.7ns, CMOS, PBGA60 MT46V32M16FN-6LIT:D vs K4H511638C-ZPB3T
K4H511638D-ZIB30 Samsung Semiconductor Check for Price DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 MT46V32M16FN-6LIT:D vs K4H511638D-ZIB30
MT46V32M16FN-6IT:D Micron Technology Inc Check for Price DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 MT46V32M16FN-6LIT:D vs MT46V32M16FN-6IT:D
Part Number Manufacturer Composite Price Description Compare
MT46V32M16BN-75L:C Micron Technology Inc Check for Price DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, FBGA-60 MT46V32M16FN-6LIT:D vs MT46V32M16BN-75L:C
V58C2512164SDLJ4 ProMOS Technologies Inc Check for Price DDR DRAM, 32MX16, CMOS, PBGA60, GREEN, MO-207, FBGA-60 MT46V32M16FN-6LIT:D vs V58C2512164SDLJ4
NT5DS32M16AF-75B Nanya Technology Corporation Check for Price DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, BGA-60 MT46V32M16FN-6LIT:D vs NT5DS32M16AF-75B
TC59LM914AMB-50 Toshiba America Electronic Components Check for Price IC 32M X 16 DDR DRAM, 24 ns, PBGA60, 13 X 17 MM, 1 MM PITCH, PLASTIC, BGA-60, Dynamic RAM MT46V32M16FN-6LIT:D vs TC59LM914AMB-50
MT46H32M16LFBF-54IT:C Micron Technology Inc Check for Price DDR DRAM, 32MX16, 5ns, CMOS, PBGA60, 8 X 9 MM, GREEN, PLASTIC, VFBGA-60 MT46V32M16FN-6LIT:D vs MT46H32M16LFBF-54IT:C
MT46V32M16FN-5BL:F Micron Technology Inc Check for Price DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 MT46V32M16FN-6LIT:D vs MT46V32M16FN-5BL:F
NT5DS32M16BF-75B Nanya Technology Corporation Check for Price DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 0.80 X 1 MM PITCH, BGA-60 MT46V32M16FN-6LIT:D vs NT5DS32M16BF-75B
MT46V32M16CY-5BLIT:J Micron Technology Inc Check for Price DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 8 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 MT46V32M16FN-6LIT:D vs MT46V32M16CY-5BLIT:J
MT46V32M16FN-75EIT:C Micron Technology Inc Check for Price DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, 10 X 12.50 MM, FBGA-60 MT46V32M16FN-6LIT:D vs MT46V32M16FN-75EIT:C
MT46V32M16CV-5B:J Micron Technology Inc Check for Price DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 8 X 12.50 MM, PLASTIC, FBGA-60 MT46V32M16FN-6LIT:D vs MT46V32M16CV-5B:J