MT46V32M16BN-6L:F vs K4H511638G-HLB3 feature comparison

MT46V32M16BN-6L:F Micron Technology Inc

Buy Now Datasheet

K4H511638G-HLB3 Samsung Semiconductor

Buy Now Datasheet
Yes Yes
Obsolete Obsolete
MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
BGA
TBGA, BGA60,9X12,40/32 BGA, BGA60,9X12,40/32
60
unknown compliant
EAR99 EAR99
8542.32.00.28 8542.32.00.28
FOUR BANK PAGE BURST
0.7 ns 0.7 ns
AUTO/SELF REFRESH
166 MHz 166 MHz
COMMON COMMON
2,4,8 2,4,8
R-PBGA-B60 R-PBGA-B60
e1 e3
12.5 mm
536870912 bit 536870912 bit
DDR1 DRAM DDR1 DRAM
16 16
1
1
60 60
33554432 words 33554432 words
32000000 32000000
SYNCHRONOUS
70 °C 70 °C
32MX16 32MX16
3-STATE 3-STATE
PLASTIC/EPOXY PLASTIC/EPOXY
TBGA BGA
BGA60,9X12,40/32 BGA60,9X12,40/32
RECTANGULAR RECTANGULAR
GRID ARRAY, THIN PROFILE GRID ARRAY
Not Qualified Not Qualified
8192 8192
1.2 mm
YES
2,4,8 2,4,8
0.005 A 0.005 A
0.405 mA 0.23 mA
2.7 V
2.3 V
2.5 V 2.5 V
YES YES
CMOS CMOS
COMMERCIAL COMMERCIAL
TIN SILVER COPPER MATTE TIN
BALL BALL
1 mm 0.8 mm
BOTTOM BOTTOM
10 mm
1 1
Yes
1

Compare MT46V32M16BN-6L:F with alternatives

Compare K4H511638G-HLB3 with alternatives