Memory
MT46V32M16BN-6L:F
Micron Technology Inc
Description: DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60

Overview of MT46V32M16BN-6L:F by Micron Technology Inc

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Part Data Attributes for MT46V32M16BN-6L:F by Micron Technology Inc

MT46V32M16BN-6L:F
Micron Technology Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
Part Package Code
BGA
Package Description
TBGA, BGA60,9X12,40/32
Pin Count
60
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.28
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.7 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
166 MHz
I/O Type
COMMON
Interleaved Burst Length
2,4,8
JESD-30 Code
R-PBGA-B60
JESD-609 Code
e1
Length
12.5 mm
Memory Density
536870912 bit
Memory IC Type
DDR1 DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
60
Number of Words
33554432 words
Number of Words Code
32000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
32MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TBGA
Package Equivalence Code
BGA60,9X12,40/32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
2,4,8
Standby Current-Max
0.005 A
Supply Current-Max
0.405 mA
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
Terminal Pitch
1 mm
Terminal Position
BOTTOM
Width
10 mm
Want to compare parts?
  1. MT46V32M16BN-6L:F
    Micron Technology Inc
    DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60
    VS

Alternate Parts for MT46V32M16BN-6L:F

This table gives cross-reference parts and alternative options found for MT46V32M16BN-6L:F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT46V32M16BN-6L:F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4H511638F-HCB3 DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, Samsung Semiconductor MT46V32M16BN-6L:F vs K4H511638F-HCB3
K4H511638J-BCB30 DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 Samsung Semiconductor MT46V32M16BN-6L:F vs K4H511638J-BCB30
MT46V32M16FN-6L:D DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 Micron Technology Inc MT46V32M16BN-6L:F vs MT46V32M16FN-6L:D
K4H511638J-BCB3T DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 Samsung Semiconductor MT46V32M16BN-6L:F vs K4H511638J-BCB3T
MT46V32M16BN-6:F DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60 Micron Technology Inc MT46V32M16BN-6L:F vs MT46V32M16BN-6:F
K4H511638F-HCB30 DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 Samsung Semiconductor MT46V32M16BN-6L:F vs K4H511638F-HCB30
K4H511638J-BLB3T DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 Samsung Semiconductor MT46V32M16BN-6L:F vs K4H511638J-BLB3T
K4H511638J-BLB30 DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 Samsung Semiconductor MT46V32M16BN-6L:F vs K4H511638J-BLB30
MT46V32M16BN-6L:D DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 Micron Technology Inc MT46V32M16BN-6L:F vs MT46V32M16BN-6L:D
K4H511638G-HCB3T DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 Samsung Semiconductor MT46V32M16BN-6L:F vs K4H511638G-HCB3T
Part Number Description Manufacturer Compare
HYB25DC512160CF-5 DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 Qimonda AG MT46V32M16BN-6L:F vs HYB25DC512160CF-5
V58C2512164SDUJ5H DDR DRAM, 32MX16, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT46V32M16BN-6L:F vs V58C2512164SDUJ5H
V58C2512164SALJ5 DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT46V32M16BN-6L:F vs V58C2512164SALJ5
V58C2512164SDLJ75E DDR DRAM, 32MX16, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT46V32M16BN-6L:F vs V58C2512164SDLJ75E
MT46H32M16LGBF-54IT:C DDR DRAM, 32MX16, CMOS, PBGA60, 9 X 8 MM, GREEN, PLASTIC, VFBGA-60 Micron Technology Inc MT46V32M16BN-6L:F vs MT46H32M16LGBF-54IT:C
MT46H32M16LGBF-54L:B DDR DRAM, 32MX16, 5.4ns, CMOS, PBGA60, 8 X 9 MM, GREEN, PLASTIC, VFBGA-60 Micron Technology Inc MT46V32M16BN-6L:F vs MT46H32M16LGBF-54L:B
MT46H32M16LGCK-6IT DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60, 10 X 11.5 MM, LEAD FREE, PLASTIC, VFBGA-60 Micron Technology Inc MT46V32M16BN-6L:F vs MT46H32M16LGCK-6IT
V58C2512164SDUJ33H DDR DRAM, 32MX16, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT46V32M16BN-6L:F vs V58C2512164SDUJ33H
V58C2512164SDLJ36 DDR DRAM, 32MX16, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT46V32M16BN-6L:F vs V58C2512164SDLJ36
V58C2512164SBS75 DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, MO-207, FBGA-60 ProMOS Technologies Inc MT46V32M16BN-6L:F vs V58C2512164SBS75

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