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MT41J256M16RE-15E:D vs H5TQ4G63MFR-H9J feature comparison

MT41J256M16RE-15E:D Micron Technology Inc

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H5TQ4G63MFR-H9J SK Hynix Inc

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SK HYNIX INC
Part Package Code BGA BGA
Package Description TFBGA, BGA96,9X16,32 TFBGA, BGA96,9X16,32
Pin Count 96 96
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Access Time-Max 0.255 ns 0.255 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 667 MHz 667 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 8 4,8
JESD-30 Code R-PBGA-B96 R-PBGA-B96
JESD-609 Code e1
Length 14 mm 13 mm
Memory Density 4294967296 bit 4294967296 bit
Memory IC Type DDR3 DRAM DDR3 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 96 96
Number of Words 268435456 words 268435456 words
Number of Words Code 256000000 256000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 95 °C
Operating Temperature-Min -40 °C
Organization 256MX16 256MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA96,9X16,32 BGA96,9X16,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 8 4,8
Standby Current-Max 0.02 A 0.02 A
Supply Current-Max 0.285 mA 0.285 mA
Supply Voltage-Max (Vsup) 1.575 V 1.575 V
Supply Voltage-Min (Vsup) 1.425 V 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V 1.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER INDUSTRIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 10 mm 9.4 mm
Base Number Matches 1 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Memory » DRAMs
Memory » DRAMs

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Compare H5TQ4G63MFR-H9J with alternatives