MT40A512M16TB-062E:R vs K4A8G165WB-BCRC feature comparison

MT40A512M16TB-062E:R Micron Technology Inc

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K4A8G165WB-BCRC Samsung Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active End Of Life
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code compliant compliant
Factory Lead Time 13 Weeks, 3 Days
Samacsys Manufacturer Micron SAMSUNG
Access Mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Clock Frequency-Max (fCLK) 1600 MHz 1200 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 8 8
JESD-30 Code R-PBGA-B96 R-PBGA-B96
Length 13 mm 13.3 mm
Memory Density 8589934592 bit 8589934592 bit
Memory IC Type DDR4 DRAM DDR4 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 96 96
Number of Words 536870912 words 536870912 words
Number of Words Code 512000000 512000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 95 °C 85 °C
Operating Temperature-Min
Organization 512MX16 512MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA96,9X16,32 BGA96,9X16,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 8 8
Supply Voltage-Max (Vsup) 1.26 V 1.26 V
Supply Voltage-Min (Vsup) 1.14 V 1.14 V
Supply Voltage-Nom (Vsup) 1.2 V 1.2 V
Surface Mount YES YES
Technology CMOS CMOS
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Width 7.5 mm 7.5 mm
Base Number Matches 1 2
Package Description FBGA-96
ECCN Code EAR99
HTS Code 8542.32.00.36
Output Characteristics 3-STATE
Standby Current-Max 0.011 A
Supply Current-Max 0.204 mA
Temperature Grade OTHER

Compare MT40A512M16TB-062E:R with alternatives

Compare K4A8G165WB-BCRC with alternatives