MS1N5299 vs JAN1N5299-1 feature comparison

MS1N5299 Microsemi Corporation

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JAN1N5299-1 Knox Semiconductor Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP KNOX SEMICONDUCTORS INC
Package Description O-LALF-W2 GLASS PACKAGE-2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type CURRENT REGULATOR DIODE CURRENT REGULATOR DIODE
JEDEC-95 Code DO-7 DO-7
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Knee Impedance-Max 155000 Ω
Limiting Voltage-Max 1.45 V 1.45 V
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.475 W 0.5 W
Qualification Status Not Qualified Not Qualified
Regulation Current-Nom (Ireg) 1.2 mA 1.2 mA
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount NO NO
Technology FIELD EFFECT FIELD EFFECT
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 9
Dynamic Impedance-Min 640000 Ω
Reference Standard MIL-19500/463

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