MRF6S18060NBR1
vs
MRF6S18060NR1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
,
|
ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
3
|
3
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Terminal Finish |
MATTE TIN
|
Matte Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
40
|
| Base Number Matches |
1
|
1
|
| HTS Code |
|
8541.29.00.75
|
| Case Connection |
|
SOURCE
|
| Configuration |
|
SINGLE
|
| DS Breakdown Voltage-Min |
|
68 V
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| Highest Frequency Band |
|
L BAND
|
| JEDEC-95 Code |
|
TO-270
|
| JESD-30 Code |
|
R-PDFP-F4
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
4
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
225 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLATPACK
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
216 W
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Form |
|
FLAT
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare MRF6S18060NBR1 with alternatives
Compare MRF6S18060NR1 with alternatives