MRF21010LR1
vs
MRF6S20010GNR1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
FREESCALE SEMICONDUCTOR INC
|
NXP SEMICONDUCTORS
|
| Package Description |
ROHS COMPLIANT, NI-360, CASE 360B-05, 2 PIN
|
ROHS COMPLIANT, PLASTIC, CASE 1265A-03, GULL, 2 PIN
|
| Pin Count |
2
|
|
| Manufacturer Package Code |
CASE 360B-05
|
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
8541.29.00
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
65 V
|
68 V
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Highest Frequency Band |
S BAND
|
S BAND
|
| JESD-30 Code |
R-CDFM-F2
|
R-PDFM-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
200 °C
|
225 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
43.75 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
40
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Samacsys Manufacturer |
|
NXP
|
| JEDEC-95 Code |
|
TO-270BA
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
3
|
| Terminal Finish |
|
Tin (Sn)
|
|
|
|
Compare MRF21010LR1 with alternatives
Compare MRF6S20010GNR1 with alternatives