MR53V1652J-XXRA vs K3N5V1000F-DC100 feature comparison

MR53V1652J-XXRA LAPIS Semiconductor Co Ltd

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K3N5V1000F-DC100 Samsung Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer LAPIS SEMICONDUCTOR CO LTD SAMSUNG SEMICONDUCTOR INC
Part Package Code DIP DIP
Package Description DIP, DIP42,.6 DIP,
Pin Count 42 42
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.71
Access Time-Max 120 ns 100 ns
Alternate Memory Width 8 8
JESD-30 Code R-PDIP-T42 R-PDIP-T42
Memory Density 4194304 bit 16777216 bit
Memory IC Type MASK ROM MASK ROM
Memory Width 8 16
Number of Functions 1 1
Number of Terminals 42 42
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 512KX8 1MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP42,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.00001 A
Supply Current-Max 0.02 mA 0.04 mA
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code No
Category CO2 Kg 12
Compliance Temperature Grade Commercial: +0C to +70C
Candidate List Date 2011-06-20
Length 52.42 mm
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 5.08 mm
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 15.24 mm

Compare MR53V1652J-XXRA with alternatives

Compare K3N5V1000F-DC100 with alternatives