MR53V1602J-XXRA
vs
K3N5V1000D-DC100
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
LAPIS SEMICONDUCTOR CO LTD
|
SAMSUNG SEMICONDUCTOR INC
|
Part Package Code |
DIP
|
DIP
|
Package Description |
DIP, DIP42,.6
|
DIP,
|
Pin Count |
42
|
42
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.71
|
8542.32.00.71
|
Access Time-Max |
100 ns
|
100 ns
|
Alternate Memory Width |
8
|
8
|
JESD-30 Code |
R-PDIP-T42
|
R-PDIP-T42
|
Memory Density |
16777216 bit
|
16777216 bit
|
Memory IC Type |
MASK ROM
|
MASK ROM
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Terminals |
42
|
42
|
Number of Words |
1048576 words
|
1048576 words
|
Number of Words Code |
1000000
|
1000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
70 °C
|
Operating Temperature-Min |
|
|
Organization |
1MX16
|
1MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
DIP
|
DIP
|
Package Equivalence Code |
DIP42,.6
|
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Standby Current-Max |
0.001 A
|
|
Supply Current-Max |
0.04 mA
|
0.04 mA
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.3 V
|
Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
Supply Voltage-Nom (Vsup) |
3.3 V
|
3 V
|
Surface Mount |
NO
|
NO
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Pitch |
2.54 mm
|
2.54 mm
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
2
|
1
|
Rohs Code |
|
No
|
Length |
|
52.42 mm
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Seated Height-Max |
|
5.08 mm
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Width |
|
15.24 mm
|
|
|
|
Compare MR53V1602J-XXRA with alternatives
Compare K3N5V1000D-DC100 with alternatives