MQSMCG5641A vs SMCG18AHE3/9AT feature comparison

MQSMCG5641A Microsemi Corporation

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SMCG18AHE3/9AT Vishay Semiconductors

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP VISHAY SEMICONDUCTORS
Part Package Code DO-215AB DO-215AB
Package Description R-PDSO-G2 R-PDSO-G2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED, HIGH RELIABILITY
Breakdown Voltage-Max 23.1 V 22.1 V
Breakdown Voltage-Min 20.9 V 20 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-215AB
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 6.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 18.8 V 18 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 1
Pbfree Code Yes
Samacsys Manufacturer Vishay
Breakdown Voltage-Nom 21.05 V
Clamping Voltage-Max 29.2 V
Peak Reflow Temperature (Cel) 260
Reference Standard UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s) 30

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Compare SMCG18AHE3/9AT with alternatives