MPS8099
vs
2SB562-C
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MOTOROLA INC
|
HITACHI LTD
|
| Package Description |
CYLINDRICAL, O-PBCY-T3
|
CYLINDRICAL, O-PBCY-W3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.29.00.75
|
|
| Collector Current-Max (IC) |
0.5 A
|
|
| Collector-Base Capacitance-Max |
6 pF
|
|
| Collector-Emitter Voltage-Max |
80 V
|
|
| Configuration |
SINGLE
|
|
| DC Current Gain-Min (hFE) |
75
|
|
| JEDEC-95 Code |
TO-226AA
|
|
| JESD-30 Code |
O-PBCY-T3
|
O-PBCY-W3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
|
| Power Dissipation Ambient-Max |
1.5 W
|
|
| Power Dissipation-Max (Abs) |
0.625 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
THROUGH-HOLE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
150 MHz
|
|
| VCEsat-Max |
0.3 V
|
|
| Base Number Matches |
10
|
3
|
|
|
|
Compare MPS8099 with alternatives
Compare 2SB562-C with alternatives