MPLAD18KP8.0CA vs MXLPLAD18KP8.0CAE3 feature comparison

MPLAD18KP8.0CA Microchip Technology Inc

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MXLPLAD18KP8.0CAE3 Microchip Technology Inc

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant compliant
Factory Lead Time 40 Weeks
Breakdown Voltage-Max 9.83 V 9.83 V
Breakdown Voltage-Min 8.89 V 8.89 V
Breakdown Voltage-Nom 9.36 V 9.36 V
Case Connection CATHODE CATHODE
Clamping Voltage-Max 13.6 V 13.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 S-PSSO-G1
Non-rep Peak Rev Power Dis-Max 18000 W 18000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Reference Standard AEC-Q101; MIL-STD-750 AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 8 V 8 V
Reverse Current-Max 450 µA
Reverse Test Voltage 8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 2 1
Additional Feature HIGH RELIABILITY

Compare MPLAD18KP8.0CA with alternatives

Compare MXLPLAD18KP8.0CAE3 with alternatives