MMSF4P01HDR2
vs
BSO211P
feature comparison
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
MOTOROLA INC
|
INFINEON TECHNOLOGIES AG
|
Package Description |
SMALL OUTLINE, R-PDSO-G8
|
SMALL OUTLINE, R-PDSO-G8
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SEPARATE, 2 ELEMENTS
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
12 V
|
20 V
|
Drain Current-Max (ID) |
4 A
|
4.7 A
|
Drain-source On Resistance-Max |
0.09 Ω
|
0.067 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
JESD-609 Code |
e0
|
|
Number of Elements |
2
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
4
|
2
|
Pbfree Code |
|
No
|
Rohs Code |
|
No
|
Part Package Code |
|
SOT
|
Pin Count |
|
8
|
Factory Lead Time |
|
4 Weeks
|
Additional Feature |
|
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
Avalanche Energy Rating (Eas) |
|
28 mJ
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Max |
|
150 °C
|
Peak Reflow Temperature (Cel) |
|
235
|
Power Dissipation-Max (Abs) |
|
2 W
|
Pulsed Drain Current-Max (IDM) |
|
18.8 A
|
|
|
|
Compare MMSF4P01HDR2 with alternatives
Compare BSO211P with alternatives