MMSF4P01HDR2 vs HAT1016R feature comparison

MMSF4P01HDR2 Motorola Semiconductor Products

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HAT1016R Renesas Electronics Corporation

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Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MOTOROLA INC RENESAS ELECTRONICS CORP
Package Description SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V 30 V
Drain Current-Max (ID) 4 A 4.5 A
Drain-source On Resistance-Max 0.09 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e0
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 2
Pbfree Code No
Part Package Code SOIC
Pin Count 8
JEDEC-95 Code MS-012AA
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 36 A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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