MMSF10N02ZR2 vs FDS6670A feature comparison

MMSF10N02ZR2 Motorola Mobility LLC

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FDS6670A onsemi

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Part Life Cycle Code Transferred Active
Ihs Manufacturer MOTOROLA INC ONSEMI
Package Description SMALL OUTLINE, R-PDSO-G8 SOP-8
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 30 V
Drain Current-Max (ID) 10 A 13 A
Drain-source On Resistance-Max 0.015 Ω 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 480 pF 200 pF
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Pbfree Code Yes
Manufacturer Package Code 751EB
HTS Code 8541.29.00.95
Factory Lead Time 14 Weeks
Samacsys Manufacturer onsemi
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation Ambient-Max 1 W
Pulsed Drain Current-Max (IDM) 50 A
Time@Peak Reflow Temperature-Max (s) 30
Turn-off Time-Max (toff) 88 ns
Turn-on Time-Max (ton) 43 ns

Compare MMSF10N02ZR2 with alternatives

Compare FDS6670A with alternatives