MMDF1N05ER1
vs
BSO615NG
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
MOTOROLA INC
ROCHESTER ELECTRONICS LLC
Package Description
CASE 751-05, SOIC-8
ROHS COMPLIANT, SO-8
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Configuration
SEPARATE, 2 ELEMENTS
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
50 V
60 V
Drain Current-Max (ID)
1 A
2.6 A
Drain-source On Resistance-Max
0.2 Ω
0.15 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Rohs Code
Part Package Code
SOT
Pin Count
8
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
60 mJ
JESD-609 Code
e3
Moisture Sensitivity Level
NOT SPECIFIED
Peak Reflow Temperature (Cel)
260
Pulsed Drain Current-Max (IDM)
10.4 A
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare MMDF1N05ER1 with alternatives
Compare BSO615NG with alternatives