MMDF1N05ER1
vs
NDS9945
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
MOTOROLA INC
NATIONAL SEMICONDUCTOR CORP
Part Package Code
SOT
Package Description
SMALL OUTLINE, R-PDSO-G8
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
Manufacturer Package Code
CASE 751-05
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SEPARATE, 2 ELEMENTS
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
50 V
60 V
Drain Current-Max (ID)
1 A
3.5 A
Drain-source On Resistance-Max
0.2 Ω
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
4
Rohs Code
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
2 W
Pulsed Drain Current-Max (IDM)
10 A
Terminal Finish
Tin/Lead (Sn/Pb)
Turn-off Time-Max (toff)
90 ns
Turn-on Time-Max (ton)
55 ns
Compare MMDF1N05ER1 with alternatives