MMBZ33VAL,215
vs
MMBZ33VAL
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
GALAXY SEMI-CONDUCTOR CO LTD
|
| Part Package Code |
TO-236
|
|
| Package Description |
PLASTIC PACKAGE-3
|
|
| Pin Count |
3
|
|
| Manufacturer Package Code |
SOT23
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.50
|
| Breakdown Voltage-Max |
34.65 V
|
|
| Breakdown Voltage-Min |
31.35 V
|
|
| Breakdown Voltage-Nom |
33 V
|
|
| Clamping Voltage-Max |
46 V
|
|
| Configuration |
COMMON ANODE, 2 ELEMENTS
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
ZENER DIODE
|
| JEDEC-95 Code |
TO-236AB
|
|
| JESD-30 Code |
R-PDSO-G3
|
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Peak Rev Power Dis-Max |
40 W
|
|
| Number of Elements |
2
|
|
| Number of Terminals |
3
|
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Polarity |
UNIDIRECTIONAL
|
|
| Power Dissipation-Max |
0.36 W
|
|
| Rep Pk Reverse Voltage-Max |
26 V
|
|
| Surface Mount |
YES
|
|
| Technology |
AVALANCHE
|
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
| Base Number Matches |
2
|
4
|
|
|
|
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