MMBZ33VAL vs SZMMBZ33VALT3 feature comparison

MMBZ33VAL NXP Semiconductors

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SZMMBZ33VALT3

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Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOT-23
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer NXP
Breakdown Voltage-Max 34.65 V
Breakdown Voltage-Min 31.35 V
Breakdown Voltage-Nom 33 V
Clamping Voltage-Max 46 V
Configuration COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 40 W
Number of Elements 2
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 0.36 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 26 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 4

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