MMBZ10VALT1G
vs
SM12AT1G
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
ON SEMICONDUCTOR
|
| Part Package Code |
SOT-23
|
SOT-23
|
| Package Description |
R-PDSO-G3
|
R-PDSO-G3
|
| Pin Count |
3
|
3
|
| Manufacturer Package Code |
CASE 318
|
CASE 318-08
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
10.5 V
|
15.75 V
|
| Breakdown Voltage-Min |
9.5 V
|
13.3 V
|
| Breakdown Voltage-Nom |
10 V
|
|
| Clamping Voltage-Max |
14.2 V
|
|
| Configuration |
COMMON ANODE, 2 ELEMENTS
|
COMMON ANODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
TO-236AB
|
TO-236
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Non-rep Peak Rev Power Dis-Max |
24 W
|
450 W
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity |
UNIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
0.225 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
6.5 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
1
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Terminal Finish |
|
TIN
|
|
|
|
Compare MMBZ10VALT1G with alternatives
Compare SM12AT1G with alternatives