MMBZ10VALT1 vs SM12AT1G feature comparison

MMBZ10VALT1 onsemi

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SM12AT1G onsemi

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ON SEMICONDUCTOR ON SEMICONDUCTOR
Part Package Code SOT-23 SOT-23
Package Description PLASTIC, CASE 318, 3 PIN R-PDSO-G3
Pin Count 3 3
Manufacturer Package Code CASE 318 CASE 318-08
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 10.5 V 15.75 V
Breakdown Voltage-Min 9.5 V 13.3 V
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code TO-236AB TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 24 W 450 W
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 0.225 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 10 V
Rep Pk Reverse Voltage-Max 6.5 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Finish TIN LEAD TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Voltage Tol-Max 5%
Working Test Current 1 mA
Base Number Matches 2 1
Moisture Sensitivity Level 1

Compare MMBZ10VALT1 with alternatives

Compare SM12AT1G with alternatives