MMBTH10LT1G
vs
BFU520A
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ONSEMI
|
NXP SEMICONDUCTORS
|
| Part Package Code |
SOT-23 (TO-236) 3 LEAD
|
|
| Package Description |
CASE 318-08, 3 PIN
|
SMALL OUTLINE, R-PDSO-G3
|
| Pin Count |
3
|
|
| Manufacturer Package Code |
318-08
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
|
| Factory Lead Time |
4 Weeks
|
|
| Samacsys Manufacturer |
onsemi
|
NXP
|
| Collector Current-Max (IC) |
0.025 A
|
0.03 A
|
| Collector-Base Capacitance-Max |
0.7 pF
|
|
| Collector-Emitter Voltage-Max |
25 V
|
12 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
60
|
60
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
L BAND
|
| JEDEC-95 Code |
TO-236
|
TO-236AB
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.3 W
|
0.45 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Matte Tin (Sn) - annealed
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
650 MHz
|
10000 MHz
|
| Base Number Matches |
2
|
4
|
| Additional Feature |
|
LOW NOISE
|
| Operating Temperature-Min |
|
-40 °C
|
| Reference Standard |
|
AEC-Q101; IEC-60134
|
| Transistor Application |
|
AMPLIFIER
|
|
|
|
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