MMBTH10LT1G vs MMBTH10-7 feature comparison

MMBTH10LT1G onsemi

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MMBTH10-7 Diodes Incorporated

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Pbfree Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ONSEMI DIODES INC
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description CASE 318-08, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Manufacturer Package Code 318
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Factory Lead Time 27 Weeks, 4 Days
Samacsys Manufacturer onsemi
Collector Current-Max (IC) 0.025 A 0.05 A
Collector-Base Capacitance-Max 0.7 pF 0.7 pF
Collector-Emitter Voltage-Max 25 V 25 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 60
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 650 MHz 650 MHz
Base Number Matches 1 1
Rohs Code No
Transistor Application AMPLIFIER

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