MMBT6428LT3
vs
MMBT6428
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
|
| Pin Count |
3
|
|
| Manufacturer Package Code |
CASE 318-08
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW NOISE
|
|
| Collector Current-Max (IC) |
0.2 A
|
0.2 A
|
| Collector-Emitter Voltage-Max |
50 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
250
|
250
|
| JEDEC-95 Code |
TO-236AB
|
|
| JESD-30 Code |
R-PDSO-G3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
0.225 W
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare MMBT6428LT3 with alternatives
Compare MMBT6428 with alternatives