MMBT5551/L99Z
vs
2N5551G
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
ONSEMI
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
LEAD FREE, CASE 29-11, TO-226AA, 3 PIN
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
|
| Collector Current-Max (IC) |
0.2 A
|
0.6 A
|
| Collector-Base Capacitance-Max |
6 pF
|
|
| Collector-Emitter Voltage-Max |
160 V
|
160 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
30
|
| JEDEC-95 Code |
TO-236AB
|
TO-92
|
| JESD-30 Code |
R-PDSO-G3
|
O-PBCY-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
0.35 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| VCEsat-Max |
0.2 V
|
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
TO-92 (TO-226) 5.33mm Body Height
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
29-11
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
onsemi
|
| JESD-609 Code |
|
e1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
1.5 W
|
| Terminal Finish |
|
Tin/Silver/Copper (Sn/Ag/Cu)
|
| Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
Compare MMBT5551/L99Z with alternatives
Compare 2N5551G with alternatives