MMBT5179
vs
2SC3512
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
HITACHI LTD
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
CYLINDRICAL, O-PBCY-T3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.75
|
|
| Additional Feature |
LOW NOISE
|
|
| Collector Current-Max (IC) |
0.05 A
|
0.05 A
|
| Collector-Base Capacitance-Max |
1 pF
|
1.6 pF
|
| Collector-Emitter Voltage-Max |
12 V
|
11 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
25
|
50
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JEDEC-95 Code |
TO-236AB
|
TO-92
|
| JESD-30 Code |
R-PDSO-G3
|
O-PBCY-T3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
0.225 W
|
|
| Power Gain-Min (Gp) |
15 dB
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
900 MHz
|
6000 MHz
|
| VCEsat-Max |
0.4 V
|
|
| Base Number Matches |
5
|
3
|
| Power Dissipation-Max (Abs) |
|
0.6 W
|
|
|
|
Compare MMBT5179 with alternatives
Compare 2SC3512 with alternatives