MMBT2222AT-7-F vs PMBT2222A-T feature comparison

MMBT2222AT-7-F Diodes Incorporated

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PMBT2222A-T NXP Semiconductors

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer DIODES INC NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Diodes Incorporated
Collector Current-Max (IC) 0.6 A 0.6 A
Collector-Emitter Voltage-Max 40 V 40 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 40 40
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 300 MHz 300 MHz
Turn-off Time-Max (toff) 285 ns 250 ns
Turn-on Time-Max (ton) 35 ns 35 ns
Base Number Matches 1 1
Part Package Code SOT-23
Additional Feature HIGH CURRENT DRIVER
Collector-Base Capacitance-Max 8 pF
JEDEC-95 Code TO-236AB
Operating Temperature-Min -65 °C
Transistor Application SWITCHING
VCEsat-Max 1 V

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