MMBR2857L vs BFG65 feature comparison

MMBR2857L Motorola Mobility LLC

Buy Now Datasheet

BFG65 NXP Semiconductors

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MOTOROLA INC NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 DISK BUTTON, O-PRDB-F4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Additional Feature LOW NOISE LOW NOISE
Collector Current-Max (IC) 0.04 A 0.05 A
Collector-Base Capacitance-Max 1 pF
Collector-Emitter Voltage-Max 15 V 10 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30
Highest Frequency Band ULTRA HIGH FREQUENCY BAND L BAND
JESD-30 Code R-PDSO-G3 O-PRDB-F4
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 4
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE DISK BUTTON
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.35 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING FLAT
Terminal Position DUAL RADIAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 1000 MHz 8000 MHz
Base Number Matches 1 1
Reference Standard CECC

Compare MMBR2857L with alternatives

Compare BFG65 with alternatives