BFG65 vs BF241D-AMMO feature comparison

BFG65 North American Philips Discrete Products Div

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BF241D-AMMO NXP Semiconductors

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Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV NXP SEMICONDUCTORS
Package Description , CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.05 A 0.025 A
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 60 35
JESD-609 Code e0
Number of Elements 1 1
Operating Temperature-Max 175 °C 150 °C
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.3 W
Surface Mount YES NO
Terminal Finish Tin/Lead (Sn/Pb)
Transition Frequency-Nom (fT) 7500 MHz 150 MHz
Base Number Matches 3 1
Collector-Base Capacitance-Max 0.5 pF
Collector-Emitter Voltage-Max 40 V
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-W3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Power Dissipation Ambient-Max 0.3 W
Qualification Status Not Qualified
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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