MJE200
vs
MJE200STU
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
ONSEMI
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.75
Collector Current-Max (IC)
5 A
5 A
Collector-Base Capacitance-Max
80 pF
Collector-Emitter Voltage-Max
25 V
25 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
45
10
JEDEC-95 Code
TO-126
TO-126
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
e3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
1.5 W
Power Dissipation-Max (Abs)
15 W
1.5 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
TIN
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
65 MHz
65 MHz
VCEsat-Max
1.8 V
Base Number Matches
3
1
Part Package Code
TO-126-3
Manufacturer Package Code
340AS
Factory Lead Time
4 Weeks
Samacsys Manufacturer
onsemi
Compare MJE200 with alternatives
Compare MJE200STU with alternatives