MJD3055T4
vs
MJD3055
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MOTOROLA INC
|
GALAXY SEMI-CONDUCTOR CO LTD
|
| Package Description |
SMALL OUTLINE, R-PDSO-G2
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
10 A
|
10 A
|
| Collector-Emitter Voltage-Max |
60 V
|
60 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
5
|
5
|
| JESD-30 Code |
R-PDSO-G2
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
PNP
|
NPN
|
| Power Dissipation Ambient-Max |
20 W
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
SINGLE
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
2 MHz
|
2 MHz
|
| Turn-off Time-Max (toff) |
3000 ns
|
|
| VCEsat-Max |
8 V
|
8 V
|
| Base Number Matches |
5
|
11
|
| Additional Feature |
|
TUBE: 80
|
| JEDEC-95 Code |
|
TO-252
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max (Abs) |
|
20 W
|
| Reference Standard |
|
MIL-STD-202
|
|
|
|
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